to ? 92 1.base 2 emitter 3.collector to-92 plastic-encapsulate transistors MPSH10/mpsh11 transistor (npn) features z general purpose amplifier applications z in low noise uhf/vhf amplifiers z in low frequency drift, high output uhf oscillators maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 3 v collector cut-off current i cbo v cb =25v,i e =0 0.1 a emitter cut-off current i ebo v eb =2v,i c =0 0.1 a dc current gain h fe(1) v ce =10v, i c =4ma 60 collector-emitter saturation voltage v ce(sat) i c =4ma,i b =0.4ma 0.5 v base-emitter voltage v be i c =4ma, v ce =10v 0.95 v transition frequency f t v ce =10v,i c =4ma,f=100mhz 650 mhz collector output capacitance c cb v cb =10v, i e =0, f=1mhz 0.7 pf symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 3 v i c collector current 40 ma p c collector power dissipation 350 mw r ja thermal resistance from junction to ambient 357 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
